The 200w LED flood light panel is a device that uses […]
The 200w LED flood light panel is a device that uses the principle of photoelectric conversion to convert solar radiation light into electrical energy through semiconductor materials. 200w LED flood light It is a kind of high-efficiency solid-state light source based on semiconductor PN junction that can emit light with weak electric energy. Under a certain forward bias voltage and injection current, it injects holes in the P area and injects into the N area After the electrons diffuse into the active area, they recombine through radiation to emit photons, which directly convert electrical energy into light energy. 200w LED flood light manufacturer is a solid-state cold light source, which has the characteristics of environmental protection, no pollution, low power consumption, high light efficiency, and long life. Therefore, 200w LED flood light will become the choice of energy-saving road lighting. This photoelectric conversion process is often referred to as the "photovoltaic effect." 200w LED flood light manufacturer is a solid-state cold light source, which has the characteristics of environmental protection, no pollution, low power consumption, high luminous efficiency, and long life. Therefore, 200w LED flood light will become the choice for energy-saving road lighting. The photovoltaic effect is the abbreviation for the photovoltaic effect, which refers to the phenomenon that light causes a potential difference in different parts of a non-uniform semiconductor or a combination of semiconductor and metal.
The 200w LED flood light panel is a combination of p-type semiconductor and n-type semiconductor. P-type semiconductor (referring to positive and positive electricity) is formed by mixing single crystal silicon with a small number of trivalent elements through a special process, forming positively charged holes in the semiconductor: n-type semiconductor (referring to negative electricity, adding a small amount of five through a special process The component of negatively charged silicon produced by the valence element will form negatively charged free electrons inside the semiconductor. When two different semiconductor materials of n-type and p-type contact, due to diffusion and drift effects, at the interface, from the Built-in electric field from p-type to n-type.
When light is on the surface of the solar cell, photons with energy greater than the bandgap excite electron and hole pairs. These unbalanced minority carriers are separated under the action of the internal electric field, forming a potential difference between the two poles of the solar cell so that the solar cell can provide current to the external load.